COMPACT FIELD EFFECT TRANSISTOR WITH COUNTER-ELECTRODE AND MANUFACTURING METHOD

Title:

COMPACT FIELD EFFECT TRANSISTOR WITH COUNTER-ELECTRODE AND MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP2011254081

Kind Code:

A

Abstract:

To provide a method for manufacturing a field effect transistor having a counter electrode that can enhance its miniaturization and ease in its realization.

An etching mask, comprising a profiling pattern of a gate electrode 9, a source contact 12, a drain contact 13, and a counter-electrode contact, is formed on a substrate of semi-conductor on insulator type. The substrate is covered by a layer of a dielectric material 5 and a gate material. The counter-electrode contact is located in the pattern of the gate electrode 9. The gate material is etched to define the gate electrode 9, the source contact 12 and drain contact 13, and the counter-electrode contact. A part of a support substrate 2 is released through a pattern of a counter-electrode contact area. An electrically conductive material 22 is deposited on the free part of the support substrate 2 to form the counter-electrode contact.

Inventors:

CLAIR FENOUIL BE'RANGER
OLIVIER TOMAT
PHILIP COLONELLO
STEPHANE DELORME

Application Number:

JP2011124472A

Publication Date:

December 15, 2011

Filing Date:

June 02, 2011

Export Citation:

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Assignee:

COMMISSARIAT ENERGIE ATOMIQUE
ST MICROELECTRONICS CROLLES 2 SAS

International Classes:

H01L29/786; H01L21/336; H01L21/8244; H01L27/11

Attorney, Agent or Firm:

Hirohito Katsunuma
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
Daisuke Kimoto

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