To provide a complete depletion type SOI MOSFET capable of suppressing short channel effect caused by permitting a drain electric field to pass through a BOX layer when the thickness of an SOI layer or the BOX layer is made to be an identical thickness to that of a conventional complete depletion type SOI MOSFET, and of suppressing kink effect.
The complete depletion type SOI MOSFET 11 or 12 is configured such that a p+ region 13A or a p+ region 13B and a p+ region 13C are formed into an L shape from between at least any one of an n+ source region 3 and an n+ drain region 4 and an embedded oxide film layer 2 to an adjacent region of at least any one of the n+ source region 3 and the n+ drain region 4 on the opposite side of the side of a p-channel region 5.
HANAJIRI TATSURO
TOYABE TATSU
MORIKAWA TAKITARO
SUGANO TAKUO
| JPH0394471A | 1991-04-19 | |||
| JPS5837966A | 1983-03-05 | |||
| JPS6115369A | 1986-01-23 | |||
| JPH03296275A | 1991-12-26 | |||
| JPH0575119A | 1993-03-26 |