Title:
半導体デバイスの有機及びプラズマエッチング残さの洗浄用組成物
Document Type and Number:
Japanese Patent JP4959095
Kind Code:
B2
Abstract:
A composition for the stripping of photoresist and the cleaning of residues from substrates, and for silicon oxide etch, comprising from about 0.01 percent by weight to about 10 percent by weight of one or more fluoride compounds, from about 10 percent by weight to about 95% by weight of a sulfoxide or sulfone solvent, and from about 20 percent by weight to about 50 percent by weight water. The composition may contain corrosion inhibitors, chelating agents, co-solvents, basic amine compounds, surfactants, acids and bases.
Inventors:
Small Robert Jay
Patel Burkle Pee
Lee Wymun
Divi at Jerome
Lead christopher
Patel Burkle Pee
Lee Wymun
Divi at Jerome
Lead christopher
Application Number:
JP2002508918A
Publication Date:
June 20, 2012
Filing Date:
July 10, 2001
Export Citation:
Assignee:
EK Technology Incorporated
International Classes:
G03F7/42; C09K13/08; H01L21/02; H01L21/027; H01L21/304; H01L21/308; H01L21/311; H01L21/306
Domestic Patent References:
JP9197681A | ||||
JP2000047401A | ||||
JP11016882A | ||||
JP11282176A | ||||
JP2001242642A | ||||
JP2002099101A |
Attorney, Agent or Firm:
Minoru Nakamura
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda
Fumiaki Otsuka
Sadao Kumakura
Shishido Kaichi
Toshio Imajo
Nobuo Ogawa
Village shrine Atsuo
Takaki Nishijima
Atsushi Hakoda