COMPOSITION FOR FILM-FORMING, METHOD FOR FORMING FILM AND SILICA-BASED FILM

Title:

COMPOSITION FOR FILM-FORMING, METHOD FOR FORMING FILM AND SILICA-BASED FILM

Document Type and Number:

Japanese Patent JP2002220565

Kind Code:

A

Abstract:

To provide a composition for film-forming, capable of forming a silica-based film excellent in dielectric constant characteristic and mechanical strength as an interlayer insulating film material in a semiconductor element, etc.

This composition for film-forming contains (A) a compound obtained by hydrolyzing ≥1 kind silane compounds expressed by the general formula (1) to (3) in the presence of an alkaline compound and condensing them, and having 10-30 nm inertia radius, and (B) an organic solvent. RaSi(OR1)4-a...(1) Si(OR2)4...(2) R3b(R4O)3-bSi-(R7)d-Si(OR5)3-cR6c...(3) [wherein, R is H, F or a monovalent organic group; R1 to R6 are each the same or different monovalent organic group; R7 is O, phenylene or (CH2)n (wherein, (n) is 1-6 integer); and (d) is 0 or 1].

Inventors:

HAYASHI EIJI
HASEGAWA KOICHI
SHIODA ATSUSHI

Application Number:

JP2001016223A

Publication Date:

August 09, 2002

Filing Date:

January 24, 2001

Export Citation:

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Assignee:

JSR CORP

International Classes:

C08G77/08; C08G77/50; C09D183/02; C09D183/04; C09D183/14; H01L21/312; H01L21/316; (IPC1-7): C09D183/04; C08G77/08; C08G77/50; C09D183/02; C09D183/14; H01L21/312; H01L21/316

Domestic Patent References:

JP2002060691A	2002-02-26
JP2006352118A	2006-12-28
JP2000228399A	2000-08-15
JPH10219112A	1998-08-18
JP2000344894A	2000-12-12
JP2000044807A	2000-02-15

Foreign References:

WO2000012640A1

2000-03-09

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