強誘電体薄膜形成用組成物、強誘電体薄膜の形成方法並びに該方法により形成された強誘電体薄膜

Title:

強誘電体薄膜形成用組成物、強誘電体薄膜の形成方法並びに該方法により形成された強誘電体薄膜

Document Type and Number:

Japanese Patent JP5659457

Kind Code:

B2

Abstract:

To provide a composition for a ferroelectric thin film for improving a relative permittivity largely than in a conventional ferroelectric thin film with a simple method and suitable to usage of a thin-film capacitor having high capacity density: and to provide a method for ferroelectric thin film formation and a ferroelectric thin film formed by this method.

The composition for ferroelectric thin film formation for forming one kind of ferroelectric thin film selected from a group consisting of PLZT, PZT and PT is a liquid composition for forming a thin film of a mode of a mixed composite metal oxide in which a composite metal oxide B containing Bi is mixed into a composite metal oxide A represented by general formula (PbxLay)(ZrzTi(1-z)O3), wherein 0.9COPYRIGHT: (C)2010,JPO&INPIT

Inventors:

藤井順
野口毅
桜井英章
曽山信幸

Application Number:

JP2009060348A

Publication Date:

January 28, 2015

Filing Date:

March 13, 2009

Export Citation:

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Assignee:

三菱マテリアル株式会社

International Classes:

C04B35/49; C01G25/00; H01B3/12; H01B19/00; H01G4/12; H01G4/33; H01L21/314; H01L21/316; H01L21/822; H01L21/8242; H01L21/8246; H01L27/04; H01L27/105; H01L27/108; H01L41/09; H01L41/18; H01L41/22; H01L41/318; H01L41/37; H01L41/39; H01L41/43; H03H9/17

Attorney, Agent or Firm:

Masayoshi Suda

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