Title:
COMPOSITION FOR FORMING GAP FILLING MATERIAL FOR LITHOGRAPHY
Document Type and Number:
Japanese Patent JP2003057828
Kind Code:
A
Abstract:
To provide a gap filling material for lithography excellent in property of flattening a substrate with protrusions and recessions such as holes and trenches, causing no intermixing with a resist layer and having dry etching speed larger compared with that of the resist.
A composition for forming the gap filling material containing a polymer solution is used in manufacturing a semiconductor device by a method which consists of coating the substrate having holes with ≥1 aspect ratio defined by height/diameter with a resist and transferring an image to the substrate utilizing a lithography process and is used to flatten the substrate surface by coating the substrate therewith before coating it with the resist.
Inventors:
TAKEI SATOSHI
MIZUSAWA KENICHI
SONE YASUHISA
MIZUSAWA KENICHI
SONE YASUHISA
Application Number:
JP2001207811A
Publication Date:
February 28, 2003
Filing Date:
July 09, 2001
Export Citation:
Assignee:
NISSAN CHEMICAL IND LTD
International Classes:
G03F7/11; C08L25/18; C09D125/18; G03F7/09; (IPC1-7): G03F7/11
Domestic Patent References:
| JPS6170720A | 1986-04-11 | |||
| JP2000164701A | 2000-06-16 | |||
| JPH07333854A | 1995-12-22 | |||
| JPH05107767A | 1993-04-30 | |||
| JPH06267810A | 1994-09-22 | |||
| JPS6256947A | 1987-03-12 | |||
| JPS61180241A | 1986-08-12 |
Foreign References:
| US6057239A | 2000-05-02 |
Previous Patent: JP2003057824
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