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Patent Searching and Data


Title:
COMPOSITION FOR FORMING INSULATING FILM AND METHOD FOR PRODUCING INSULATING FILM
Document Type and Number:
Japanese Patent JP2007009048
Kind Code:
A
Abstract:

To provide a method for producing an organic porous film having ≤2.2 relative dielectric constant, with which processes of etching processing, cleaning liquid treatment, etc., are facilitated in an insulating film processing process of semiconductor device of advanced micronization and to obtain a composition for forming the organic porous film.

[1] The composition for forming an insulating film comprises a component (A) that is a resin obtained by polymerizing a compound represented by formula (1) in which when a peak P detects the resin in a GPC analysis and a peak M detects the remaining compound represented by formula (1), the weight-average molecular weight of the peak P calculated as polystyrene is ≥1,000 and ≤500,000 and when the area values of the peak P and the peak M are Ap and Am, respectively, the area ratio Am/(Am+Ap) is 0-10% and a component (B) that is a compound for forming holes. [2] The method for producing an insulating film comprises a process for coating a substrate with the composition [1] and heat-treating the substrate.


Inventors:
Sato, Hisaya
Yokota, Akira
Kin, Shodo
Application Number:
JP2005000191178
Publication Date:
January 18, 2007
Filing Date:
June 30, 2005
Export Citation:
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Assignee:
SUMITOMO CHEMICAL CO LTD
International Classes:
C09D157/00; C08F38/00; C08L25/04; C08L49/00; C09D5/25; C09D125/02; C09D149/00; H01L21/312; H01L21/768