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Title:
COMPOSITION FOR FORMING POROUS ORGANO POLYSILICA DIELECTRIC MATERIAL
Document Type and Number:
Japanese Patent JP2007238957
Kind Code:
A
Abstract:

To introduce uniformly distributed pores or voids in order to lower the dielectric constant of an intermediate layer of an electronic device, an intermetal, or an insulator in manufacturing an electronic component; and to reduce the reflection of active rays during photoresist exposure.

The composition useful for forming a porous organo polysilica dielectric material comprises a removable porogen. The porogen comprises one or more chromophores selected from the group consisting of phenyl, substituted phyenyl, naphthyl, substituted napthyl, anthracenyl, substituted anthracenyl, phenanthrenyl, substituted phenanthrenyl, and a monomer containing one or more (4-24C) alkyl groups.

COPYRIGHT: (C)2007,JPO&INPIT


Inventors:
ZAMPINI ANTHONY
GALLAGHER MICHAEL K
Application Number:
JP2007150981A
Publication Date:
September 20, 2007
Filing Date:
June 06, 2007
Export Citation:
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Assignee:
ROHM & HAAS ELECT MAT
International Classes:
C08L83/04; C08F20/18; G03F7/004; C08F230/08; C08F290/06; C08L33/04; C08L55/00; C08L83/02; C08L101/02; C09D5/32; C09D183/04; H01L21/027; H01L21/312; H01L21/316; H05K1/03; H05K3/00
Domestic Patent References:
JPH10204328A1998-08-04
JPH06118631A1994-04-28
JPH10186647A1998-07-14
Foreign References:
WO1999063587A11999-12-09
Attorney, Agent or Firm:
Patent Business Corporation Sender International Patent Office