Title:
COMPOSITION FOR FORMING SILICON-CONTAINING METAL HARD MASK AND PATTERN FORMATION METHOD
Document Type and Number:
Japanese Patent JP2023143802
Kind Code:
A
Abstract:
To provide a silicon-containing metal hard mask forming composition that has a high super fine pattern collapse prevention effect in a multilayer resist method, can form a resist pattern excellent in LWR, and has excellent dry-etching resistance and wet detachability to a conventional silicon-containing under layer film material, and has an embedding characteristics excellent to a conventional metal hard mask material.SOLUTION: A composition for forming a silicon-containing metal hard mask contains (A) metal oxide nanoparticles, (B) thermally crosslinkable polysiloxane (Sx) that does not contain an organic group including an aromatic ring, and (C) a solvent.SELECTED DRAWING: Figure 1
Inventors:
KOBAYASHI NAOKI
TAKIZAWA KANATA
MITSUI RYO
YANO TOSHIHARU
TAKIZAWA KANATA
MITSUI RYO
YANO TOSHIHARU
Application Number:
JP2023041625A
Publication Date:
October 06, 2023
Filing Date:
March 16, 2023
Export Citation:
Assignee:
SHINETSU CHEMICAL CO
International Classes:
G03F7/11; C08G77/04; H01L21/027
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toru Otsuka
Toshihiro Kobayashi
Toru Otsuka
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