Title:
COMPOSITION AND METHOD FOR FORMING SEMICONDUCTOR AND/OR SILICON-CONTAINING THIN FILM AND STRUCTURE FORMED THEREFROM
Document Type and Number:
Japanese Patent JP2005051222
Kind Code:
A
Abstract:
To provide compositions and methods for forming patterned semiconductors and patterned semiconductor thin films and/or to provide structures.
The composition comprises passivated semiconductor nanoparticles and at least one of first Group IVA compounds represented by the formula (AHX)n wherein A is independently Si or Ge and/or second Group IVA compounds represented by the formula (AHX)m(AHyRz-y)p(ZR'w)q, wherein each A is independently Si or Ge, each R is independently alkyl, aryl, aralkyl, halogen, BHsR"2-s, PHsR"2-s, AsHsR"2-s, or AHtR"3-t, and R" is alkyl, aryl, aralkyl, halogen or AH3, and Z is selected from a group of B(boron), P(phosphorus), and As(arsenic), and R' is R or H(hydrogen).
Inventors:
KUNZE KLAUS
HAUBRICH SCOTT
ZURCHER FABIO
RIDLEY BRENT
ROCKENBERGER JOERG
HAUBRICH SCOTT
ZURCHER FABIO
RIDLEY BRENT
ROCKENBERGER JOERG
Application Number:
JP2004202419A
Publication Date:
February 24, 2005
Filing Date:
July 08, 2004
Export Citation:
Assignee:
KOVIO INC
International Classes:
B32B9/04; B32B13/04; C09D11/00; H01L21/20; H01L21/208; H01L21/336; H01L21/44; (IPC1-7): H01L21/208
Attorney, Agent or Firm:
Akihiro Ryuka