有機トランジスタ絶縁膜用組成物

Title:

有機トランジスタ絶縁膜用組成物

Document Type and Number:

Japanese Patent JP5298680

Kind Code:

B2

Abstract:

To provide a composition for an organic transistor insulating film which is excellent in dielectric breakdown voltage.

[1] The composition for an organic transistor insulating film contains (A) a polymerizable ionic liquid, (B) a crosslinking agent, (C) and a polymerization initiator. [2] (A) The polymerizable ionic liquid contains a compound having at least one selected from a group consisting of radical polymerizable groups and cation polymerizable groups in a molecule. [3] (B) The crosslinking agent contains a compound having at least two selected from a group consisting of radical polymerizable groups and cation polymerizable groups in a molecule. [4] (C) The polymerization initiator contains a compound which produces a radical or a cation by heat or electromagnetic beam.

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Inventors:

Koichi Yahagi

Application Number:

JP2008189501A

Publication Date:

September 25, 2013

Filing Date:

July 23, 2008

Export Citation:

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Assignee:

Sumitomo Chemical Co., Ltd.

International Classes:

H01L29/786; C08G59/68; C08G65/10; C08G65/18; H01L21/312; H01L51/05; H01L51/30

Domestic Patent References:

JP2005513786A
JP2007116170A
JP2004255481A
JP2005223967A
JP2005255843A

Other References:

Jiyoul LEE et al.,“Ion Gel Gated Polymer Thin-Film Transistors”,Journal of the American Chemical Society,米国,American chemical Society,2007年 3月24日,Vol.129,p.4532-4533

Attorney, Agent or Firm:

Toru Nakayama
Toru Sakamoto

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