Title:
COMPOSITION FOR PASSIVATION FILM, SEMICONDUCTOR SUBSTRATE WITH PASSIVATION FILM AND MANUFACTURING METHOD THEREOF, AND SOLAR BATTERY ELEMENT AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2014167961
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide: a composition for a passivation film which allows a passivation film having a desired shape to be formed by a simple and convenient method, and is excellent in storage stability and compactness; a semiconductor substrate provided with a passivation film by use of the composition; a method for manufacturing the semiconductor substrate; a solar battery element; and a method for manufacturing the solar battery element.SOLUTION: A composition for a passivation film comprises: a metal alkoxide compound expressed by the general formula (I) below; water; and a hydrolysis catalyst. [In the general formula (I), M represents any of Nb, Ta, V, Y and Hf; R's are independent of each other and represent alkyl groups each having 1-8 carbon atoms, respectively; and m is an integer of 0-5.]
Inventors:
ODA AKIHIRO
YOSHIDA MASATO
NOJIRI TAKESHI
KURATA YASUSHI
TANAKA TORU
ADACHI SHUICHIRO
HAYASAKA TAKESHI
YOSHIDA MASATO
NOJIRI TAKESHI
KURATA YASUSHI
TANAKA TORU
ADACHI SHUICHIRO
HAYASAKA TAKESHI
Application Number:
JP2013038896A
Publication Date:
September 11, 2014
Filing Date:
February 28, 2013
Export Citation:
Assignee:
HITACHI CHEMICAL CO LTD
International Classes:
H01L21/316; C08G79/00; H01L31/04
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