COMPOSITION, PATTERN FORMATION METHOD AND SEMICONDUCTOR DEVICE

Title:

COMPOSITION, PATTERN FORMATION METHOD AND SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2023045109

Kind Code:

A

Abstract:

To provide a composition which can be brought into close contact with a surface including both a conductive material and an insulation material, a semiconductor device having a first layer obtained from the composition, and a pattern formation method using the composition.SOLUTION: A composition contains a compound. The compound includes a connection group which has 2 to 18 carbon atoms and includes a carbon atom, a polymerizable functional group which is coupled to the connection group and can form a covalent bond with a photocurable resin by radical reaction, a first reactive group which is coupled to the connection group and can form a covalent bond with a metal atom, and a second reactive group which is coupled to the connection group and can form a covalent bond with a compound containing Si and O by hydrolysis or dehydration reaction.SELECTED DRAWING: Figure 1

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Inventors:

HIGUCHI TSUYOSHI
IWASAKI TAKAHIRO

Application Number:

JP2021153336A

Publication Date:

April 03, 2023

Filing Date:

September 21, 2021

Export Citation:

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Assignee:

KIOXIA CORP

International Classes:

C08F16/36; C08F2/48; H01L21/312

Attorney, Agent or Firm:

Patent Attorney Corporation Suzue Patent General Office

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