Title:
COMPOSITION FOR SILICON ETCHING
Document Type and Number:
Japanese Patent JP2007051200
Kind Code:
A
Abstract:
To provide an etching composition suppressing the etching of a polysilicon at a room temperature and capable of accelerating the etching rate of the polysilicon in a heated state.
This composition for silicon etching is provided by containing piperazine, N,N,N',N",N"-pentamethyldiethylenetriamine and water.
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Inventors:
TAKAHASHI FUMIHARU
HARA YASUSHI
HARA YASUSHI
Application Number:
JP2005236576A
Publication Date:
March 01, 2007
Filing Date:
August 17, 2005
Export Citation:
Assignee:
TOSOH CORP
International Classes:
C09K13/06; B24B37/00; C09K3/14; H01L21/304; H01L21/306