Title:
COMPOUND, COPOLYMER, PRODUCTION OF THE COPOLYMER, PHOTORESIST COMPOSITION, FORMATION OF PHOTORESIST PATTERN USING THE COMPOSITION AND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3643491
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a photoresist composition suitable for lithography process using a KrF (248 mm) or ArF (193 nm) light source.
SOLUTION: This photoresist composition contains a copolymer obtained by polymerizing a compound of the formula (R1 is hydrogen, a 1-10C substituted or nonsubstituted straight-chain or branched-chain alkyl or cyclcalkyl, alkoxyalkyl or cycloalkoxy alkyl; R2 is hydrogen or a methyl group).
Inventors:
Chung Min Ho
Application Number:
JP37466098A
Publication Date:
April 27, 2005
Filing Date:
December 28, 1998
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C07J63/00; C07C69/608; C07J9/00; C08F20/18; C08F220/10; C08F220/18; C08F220/26; C08K5/10; C08L33/08; C08L55/00; G03F7/004; G03F7/027; G03F7/028; G03F7/038; G03F7/039; H01L21/027; H01L21/47; (IPC1-7): C08F220/18; C07C69/608; C07J63/00; G03F7/039; H01L21/027
Domestic Patent References:
| JP10232495A |
Other References:
Markus Ahlheim et al.,Bile Acids Bound to Polymers, Polymer Bulletin,ドイツ,1986年,15 Vol.6,497-501
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune