COMPOUND AND ITS PRODUCTION, COPOLYMER AND ITS PRODUCTION, COPOLYMER RESIN FOR PHOTORESIST AND ITS PRODUCTION, PHOTORESIST COMPOSITION AND ITS PRODUCTION, AND PHOTORESIST PATTERN FORMATION AND SEMICONDUCTOR ELEMENT

Japanese Patent JP3835506

B2

PROBLEM TO BE SOLVED: To obtain a new compound useful as a monomer for a copolymer resin, for photoresist, which is used for ultra-short wavelength light sources such as ArF, has high transparency at a specific wavelength, high etching resistance, a high protection coefficient in the copolymer resin, high adhesiveness with suppressing the top-loss phenomenon, and excellent resolution.
SOLUTION: This compound, shown by the formula (i.e., 2,3-di-tert-butyl-5- norbornene-2,3-dicarboxylate), is obtained by reacting cyclopentadiene with 1,4-di-tert-butyl furnate in a usual organic solvent (e.g. tetrahydrofuran), for example, at 20-80°C for 10 h or so, followed by removing the organic solvent, for example, by a rotary evaporator. A copolymer resin for photoresist having high transparency at 193 nm and an excellent resolution of 0.13 μm in a practical patterning experiment, can be obtained by copolymerizing the compound with maleic acid anhydride or the like.

Chung Min Ho
High dimension
Kin Toki

JP37466198A

October 18, 2006

December 28, 1998

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HYNIX SEMICONDUCTOR INC.

C08F222/14; H01L21/027; C07C69/753; C08F222/06; C08F232/04; C08L35/02; G03F7/039; (IPC1-7): C07C69/753; C08F222/06; C08F222/14; G03F7/039; H01L21/027; //C08L35/02

WO1997033198A1

Chem. Mater., Vol.8, pp376-381,1996
J. Photopolym. Sci. Technol., Vol.10, No.4, pp529-533, 1997(1997年7月1日受入)

Hiroshi Arafune
Yoshio Arafune

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