Title:
COMPOUND, MATERIAL FOR THIN FILM FORMATION, AND THIN FILM PRODUCTION METHOD
Document Type and Number:
Japanese Patent JP2018083771
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a material for thin film formation which has high vapor pressure, low melting point, and high thermal stability, and allows production of a high-quality metal-containing thin film.SOLUTION: The material for thin film formation contains a compound represented by the general formula (2) in the figure. (In the formula, R, R, R, Rand Reach independently represent hydrogen, a C1 to 4 linear or branched alkyl group, or a C3 to 12 trialkylsilyl group; R, Rand Reach independently represent a C1 to 4 linear or branched alkyl group; Mrepresents a metal atom; and m is a number from 1 to 4, where m+1 corresponds to the valence of the metal atom represented by M).SELECTED DRAWING: None
Inventors:
SATO HIROKI
WATANUKI SHOICHI
WATANUKI SHOICHI
Application Number:
JP2016226604A
Publication Date:
May 31, 2018
Filing Date:
November 22, 2016
Export Citation:
Assignee:
ADEKA CORP
International Classes:
C07F19/00; C23C16/18; H01L21/31; H01L21/316; H01L21/318
Domestic Patent References:
JP2016037654A | 2016-03-22 | |||
JP2003335791A | 2003-11-28 |
Foreign References:
GB2399817A | 2004-09-29 | |||
KR20080101040A | 2008-11-21 |
Other References:
EUROPEAN POLYMER JOURNAL, vol. 40, JPN6020024645, 2004, pages 1051 - 1056, ISSN: 0004302674
Attorney, Agent or Firm:
Michiharu Soga
Kajinami order
Kazuhiro Oyaku
Satoshi Iino
Kajinami order
Kazuhiro Oyaku
Satoshi Iino