COMPOUND, RESIST COMPOSITION, AND METHOD FOR PRODUCING RESIST PATTERN

Japanese Patent JP2022173130

A

To provide a compound and a resist composition which allow a resist pattern having a good mask error factor (MEF) to be produced.SOLUTION: There are provided: a compound represented by a formula (I); and a resist composition containing the compound. [In the formula, W represents an optionally substituted aliphatic hydrocarbon group; R1 represents *-R10 or *-L2-CO-O-R10; R2 represents *-R10, *-CO-R10, *-CO-O-R10, *-L2-CO-O-R10 or the like; L2 represents an optionally substituted alkanediyl group; R10 represents a group represented by a formula (IC); RA represents a saturated hydrocarbon group; u1 represents 0, 1 or 2, s1 represents 1 or 2, and t1 represents 0 or 1, provided that s1+t1 is 1 or 2; L3 represents a single bond or an optionally substituted hydrocarbon group; m1 and m2 each represent an integer of 1-6; m3 represents an integer of 0-4; and R3 represents a halogen atom, a hydroxy group or the like.]SELECTED DRAWING: None

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KITA YUJI
USAGAWA DAN
ICHIKAWA KOJI

JP2022075881A

November 17, 2022

May 02, 2022

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SUMITOMO CHEMICAL CO

G03F7/004; C07D303/16; C07D305/06; C09K3/00; G03F7/038; G03F7/039; G03F7/20

Shinki Global IP Patent Corporation

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