Title:
COMPOUND SEMICONDUCTOR CRYSTAL GROWTH METHOD
Document Type and Number:
Japanese Patent JPS5526635
Kind Code:
A
Abstract:
PURPOSE:To prepare an epi-use saturated solution having a high purity in a short time by melting and passing the gas of one component of the composite semicondouctor crystal through a chamber in having a gas atmosphere containing other element of the composite semiconductor crystal. CONSTITUTION:A solid Ga with a high purity is accommodated in a chamber 27 which is exhaust 22 and the Ga is heated and molten by introduction 25 of Ar. The chamber 27 is communicated with a tube 23 by lifting a stand 29 to pour AsH3 with Ar into the molten Ga 35. At the same time, the AsH3 is sprayed from a tube 24 to the surface of the Ga 35 to sustain the gas flow while setting the chamber and molten composite material at 850 deg.C substantially. Therefore, the As is diffused from the exterior and interior of the molten composition and saturation is accomplished in a comparatively short time. Subsequently, the stand 29 is lowered, a distribution is given to an epi-growth use source port 28 and the source can be obtained by cooling under the Ar atmosphere. According such a process, a large amount of saturated molten material can be prepared in several tens of minutes.
Inventors:
SHIBATOMI AKIHIRO
Application Number:
JP9899678A
Publication Date:
February 26, 1980
Filing Date:
August 16, 1978
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C30B19/00; C30B25/14; C30B29/40; H01L21/20; H01L21/205; H01L33/30; (IPC1-7): C30B19/00; C30B25/14; H01L21/20; H01L33/00