Title:
化合物半導体装置及びその製造方法
Document Type and Number:
Japanese Patent JP5903818
Kind Code:
B2
Abstract:
An embodiment of a compound semiconductor device includes: a substrate; a compound semiconductor stacked structure formed over the substrate; and an amorphous insulating film formed between the substrate and the compound semiconductor stacked structure.
Inventors:
Tetsuichi Nakamura
Atsushi Yamada
Shiro Ozaki
Kenji Imanishi
Atsushi Yamada
Shiro Ozaki
Kenji Imanishi
Application Number:
JP2011209796A
Publication Date:
April 13, 2016
Filing Date:
September 26, 2011
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/338; H01L21/205; H01L21/314; H01L21/336; H01L29/778; H01L29/78; H01L29/786; H01L29/812
Domestic Patent References:
| JP2006041458A | ||||
| JP2004235193A | ||||
| JP2010258352A | ||||
| JP2002225170A | ||||
| JP2010521800A |
Attorney, Agent or Firm:
Takayoshi Kokubun