PURPOSE: To obtain a MOSFET having excellent characteristics by employing a film made of an element having high vapor pressure of component elements of a compound semiconductor substrate or one or more types of the elements belonging the same group as an insulating film.
CONSTITUTION: In a MIS field effect transistor in which compound semiconductor formed with an electrode metal layer as a base through an insulating film on a compound semiconductor substrate, as an insulating film, a film made of an element having high vapor pressure of component elements of the substrate or an element (phosphorus, arsenic or antimony) of the same group as it is employed. Thus, the composition of the film becomes uniform, and a MISFET having excellent characteristics is obtained.
KAISHIYOU TAKASHI
ODA OSAMU
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