Title:
COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME
Document Type and Number:
Japanese Patent JP2015035557
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a compound semiconductor device which achieves excellent high-frequency property, high withstand voltage and high reliability though achieving reduced device size.SOLUTION: An AlGaN/GaN HEMT comprises: a compound semiconductor laminated structure 2; a gate electrode 7 on the compound semiconductor laminated structure 2; and a p-type semiconductor 6 which is covered with the gate electrode 7 from one lateral face to a top face on the compound semiconductor laminated structure 2, in which the gate electrode 7 has an electrode length Lg defined by a lower part of the gate electrode.
Inventors:
NIIDA YOSHITAKA
Application Number:
JP2013166902A
Publication Date:
February 19, 2015
Filing Date:
August 09, 2013
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/338; H01L21/205; H01L29/778; H01L29/812; H02M3/28; H02M3/335
Domestic Patent References:
| JP2013080895A | 2013-05-02 | |||
| JP2011054845A | 2011-03-17 | |||
| JP2004342907A | 2004-12-02 | |||
| JP2003059943A | 2003-02-28 | |||
| JP2006513580A | 2006-04-20 |
Attorney, Agent or Firm:
Takayoshi Kokubu
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