Title:
COMPOUND SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH03257972
Kind Code:
A
Abstract:
PURPOSE:To thin a Langmuir-Blodgett film considerably and shorten the film formation time by sticking the same film to a compound semiconductor film, which is a second insulating film, of group II-VI elements. CONSTITUTION:Electrodes 2 are formed on part of the surface of a CMT substrate 1 and a Langmuir-Blodgett film 4 is laminated on the other sections of the surface at room temperature. A high-quality ZnO film 5 as a compound semiconductor of group II-VI elements is laminated on the surface of the Langmuir-Blodgett film 4 by the organic metal vapor-phase growth method using light excitation. A CdHgTe semiconductor device having the passivation film thus formed prevents Hg from removing from the CMT substrate 1 with the Langmuir-Blodgett film 4 and ZnO film 5. The ZnO film 5 acts as an anti- reflection film, therefore, infrared rays entering the semiconductor device can efficiently be absorbed.
Inventors:
TERADA TOSHIYUKI
SUZUKI TETSUYA
FUJITA YUKIHISA
FUJII SATOSHI
SHIMANOE NORITAKE
SUZUKI TETSUYA
FUJITA YUKIHISA
FUJII SATOSHI
SHIMANOE NORITAKE
Application Number:
JP5495390A
Publication Date:
November 18, 1991
Filing Date:
March 08, 1990
Export Citation:
Assignee:
NIPPON STEEL CORP
International Classes:
H01L21/314; H01L31/0264; (IPC1-7): H01L21/314; H01L31/0264
Attorney, Agent or Firm:
Takaharu Takita
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