Title:
COMPOUND SEMICONDUCTOR INTEGRATED CIRCUIT
Document Type and Number:
Japanese Patent JP2549795
Kind Code:
B2
Abstract:
PURPOSE: To obtain a compound semiconductor integrated circuit which can be used for HEMT-ICs, etc., can be miniaturized and easily earthed, and has an excellent high-frequency characteristic and less numbers of pads and wires.
CONSTITUTION: The title integrated circuit is provided with a high-resistance buffer layer 7 grown on an N-type substrate 8, working layers 4, 5, and 6 formed on the layer 7, and earthing electrode 11 and source electrode 1 formed on the substrate 8 and the integrated circuit is earthed by connecting the source electrode 1 to the earthing electrode 11 through a wiring metal.
Inventors:
KINOSHITA YOSHIHIRO
Application Number:
JP6037492A
Publication Date:
October 30, 1996
Filing Date:
March 17, 1992
Export Citation:
Assignee:
TOKYO SHIBAURA ELECTRIC CO
International Classes:
H01L27/095; H01L21/338; H01L29/778; H01L29/812; (IPC1-7): H01L29/778; H01L21/338; H01L27/095; H01L29/812
Domestic Patent References:
| JP6159875A | ||||
| JP439968A | ||||
| JP6053089A | ||||
| JP5448574U |
Attorney, Agent or Firm:
Hidekazu Miyoshi (1 outside)