Title:
COMPOUND SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3728332
Kind Code:
B2
Abstract:
PURPOSE: To provide an active layer of good quality and the interface of good quality between the active layer and an evaporation preventive layer by a method wherein in the production process of a compound semiconductor light- emitting element, isolation of In is inhibited to the utmost and a crystal growth, which is superior in controllability, is made possible.
CONSTITUTION: An In-containing active layer 5 is formed and thereafter, an evaporation preventive layer 6 is formed at a temperature of a degree that isolation of In is not generated. As the layer 6, a P-type AlxGa1-xN (0≤x≤1) layer or the like is used. Even if a substrate temperature is raised to 1020°C or thereabouts for forming an upper clad layer 7, the isolation of the In is never generated from the layer 5 by the existence of the layer 6. Thereby, it is facilitated to control the composition ratio of the In and the active layer of good quality and the interface of good quality between the layer 5 and the layer 6 can be provided.
Inventors:
Toshio Hata
Application Number:
JP9863395A
Publication Date:
December 21, 2005
Filing Date:
April 24, 1995
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L33/00; H01L33/06; H01L33/12; H01L33/32; H01S5/00; H01S5/323; H01S5/343; H01S5/223; (IPC1-7): H01S5/343
Domestic Patent References:
| JP9116130A |
Attorney, Agent or Firm:
Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai
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