COMPOUND SEMICONDUCTOR ORGANIC METAL VAPOR GROWTH METHOD

Title:

COMPOUND SEMICONDUCTOR ORGANIC METAL VAPOR GROWTH METHOD

Document Type and Number:

Japanese Patent JPH02254716

Kind Code:

A

Abstract:

PURPOSE: To make it possible to grow a monoatomic layer by increasing growth speed by a method wherein an adduct, containing an element constituting a compound semiconductor, is used as raw gas.

CONSTITUTION: A fixed quantity of AsH3 is fed to a heated GaAs substrate, and subsequently, a fixed quantity of trimethylgallium-trimethylarsenic adduct Me3Ga-AsMe3 (Me is a methyl radical) is supplied in place of AsH3. As a result, Me3Ga-AsMe is easily absorbed by an active As atomic surface, the methyl radical located on Ge is removed, and besides, the methyl radical is removed by converting it into methane by introducing AsH3. To be more precise, GaAs is grown by a monoatomic layer by feeding AsH3 and Me3Ga-AsMe3 alternately, and GaAs having a few defects is formed. As a result, the period of raw material feeding can be reduced by half, and growth speed can also be increased.

Inventors:

MASHITA MASAO
KAWAHISA YASUTO
SASAKI MASAHIRO

Application Number:

JP7695389A

Publication Date:

October 15, 1990

Filing Date:

March 29, 1989

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

H01L21/205; (IPC1-7): H01L21/205

Attorney, Agent or Firm:

Norio Ohu

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