Title:
COMPOUND THIN FILM PATTERN FORMING METHOD USING HIGH LUMINANCE ION BEAM
Document Type and Number:
Japanese Patent JP3168593
Kind Code:
B2
Abstract:
PURPOSE: To form a fine thin film compound pattern by lowering and adjusting the target arriving kinetic energy of an ion beam induced by high luminance convergent ion beam irradiation, to a specified level.
CONSTITUTION: An ion beam B outputted from a liquid metal ion source 11 is converged by electrostatic type lenses 13a, 13b, and selected by a mask filter 14. Before said beam reaches a sample stage 17, a specified deflection voltage is applied to deflection electrodes 15. Thereby an arbitrary pattern can be drawn on the surface of a substrate 1. As to kinetic energy, the arriving energy of the ion beam B can be continuously changed from zero to acceleration power supply output, by adjusting the output of a deceleration power supply 20. Hence the kind of ion element as the ion beam with which the substrate 1 is irradiated and gas arranged in the vicinity of a target are chemically bonded by adjusting the arriving energy of the ion beam, and a fine thin film pattern can be formed in an arbitrary shape.
Inventors:
Shinji Nagamachi
Application Number:
JP7394691A
Publication Date:
May 21, 2001
Filing Date:
March 13, 1991
Export Citation:
Assignee:
SHIMADZU CORPORATION
International Classes:
H01L21/203; C23C14/32; C30B25/06; H01L21/31; H01L21/363; (IPC1-7): H01L21/363; C23C14/32; H01L21/31
Domestic Patent References:
| JP1127671A | ||||
| JP2181984A | ||||
| JP63170940A |
Attorney, Agent or Firm:
Hiroyuki Nakai