Title:
イオン注入装置内の粒子を低減するための導電性ビーム光学素子
Document Type and Number:
Japanese Patent JP7121801
Kind Code:
B2
Abstract:
Provided herein are approaches for reducing particles in an ion implanter. An electrostatic filter may include a housing and a plurality of conductive beam optics within the housing. The conductive beam optics are arranged around an ion beam-line directed towards a wafer, and may include entrance aperture electrodes proximate an entrance aperture of the housing. The conductive beam optics may further include energetic electrodes downstream along the ion beam-line from the entrance aperture electrodes, and ground electrodes downstream from the energetic electrodes. The energetic electrodes are positioned farther away from the ion beam-line than the entrance electrodes and the ground electrodes, thus causing the energetic electrodes to be physically blocked from impact by an envelope of back-sputter material returning from the wafer. The electrostatic filter may further include an electrical system for independently delivering a voltage and a current to each of the conductive beam optics.
Inventors:
Chan, Shonwoo
Sinclair, Frank
Rihansky, Alexandre
Campbell, Christopher
Lindbergh, Robert Sea.
Sinclair, Frank
Rihansky, Alexandre
Campbell, Christopher
Lindbergh, Robert Sea.
Application Number:
JP2020543845A
Publication Date:
August 18, 2022
Filing Date:
January 22, 2019
Export Citation:
Assignee:
Varian Semiconductor Equipment Associates, Inc.
International Classes:
H01J37/317; H01J37/05; H01L21/265
Domestic Patent References:
| JP2014506385A | ||||
| JP2015191740A |
Foreign References:
| US9685298 |
Attorney, Agent or Firm:
Sonoda & Kobayashi Patent Attorneys Corporation
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