Title:
CONDUCTOR FILM FORMING METHOD AND DEVICE
Document Type and Number:
Japanese Patent JPH1074765
Kind Code:
A
Abstract:
To enable a required part of a wiring film provided onto a semiconductor device to be exposed so as to form a conductor film on the wiring film in a good state.
A connection hole 105 is provided onto an insulating film on a wiring 104 by irradiation with an ion beam, and a buffer film is formed on a region 110 which comprises the connection hole 105 by scanning of an ion beam in an atmosphere of chrome carbonyl Cr(CO)6;. Furthermore, when an Ar laser beam is condensed and made to irradiate the region 110 in an atmosphere of molybdenum carbonyl Mo(CO)6, the connection hole 205 is filled up with Mo, and the region 110 is scanned by a laser beam, thereby a pad 111 can be formed in a good state.
Inventors:
HONGO MIKIO
MIZUKOSHI KATSURO
SANO HIDEZO
KAMIMURA TAKASHI
ITO FUMIKAZU
SHIMASE AKIRA
HARAICHI SATOSHI
TAKAHASHI TAKAHIKO
MIZUKOSHI KATSURO
SANO HIDEZO
KAMIMURA TAKASHI
ITO FUMIKAZU
SHIMASE AKIRA
HARAICHI SATOSHI
TAKAHASHI TAKAHIKO
Application Number:
JP25678497A
Publication Date:
March 17, 1998
Filing Date:
September 22, 1997
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/3205; H01L23/52; (IPC1-7): H01L21/3205
Domestic Patent References:
| JPH01257351A | 1989-10-13 |
Attorney, Agent or Firm:
Masami Akimoto
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