接続材料、接続材料の製造方法、半導体装置、半導体装置の製造方法、パワーモジュール

Title:

接続材料、接続材料の製造方法、半導体装置、半導体装置の製造方法、パワーモジュール

Document Type and Number:

Japanese Patent JP5723523

Kind Code:

B2

Abstract:

To solve such problems of a conventional semi-conductor device connected by using a Zn/Al/An clad material that the thermal stress caused by the difference in coefficient of thermal expansion can not be mitigated during the die bonding in the semi-conductor device, and a semi-conductor element can be destroyed, and that if the joining temperature is high at ≥390-400°C, the heat resistance of a peripheral member including joined members such as an Si chip and frame must be at least ≥400°C, options of the members are decreased.

The joining material is composed of an Al-based alloy layer containing metals of one or more out of Mg, Sn, Ge, Ga, Bi and In, and a Zn-based alloy layer provided on an outermost surface of the Al-based alloy layer.

Inventors:

Masahide Okamoto
Yasushi Ikeda
Yuki Murasato

Application Number:

JP2009209957A

Publication Date:

May 27, 2015

Filing Date:

September 11, 2009

Export Citation:

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