PURPOSE: To enable the picking-up of an electrode leading wire from the surface by so forming a connecting electrode as to be disposed on the side face of a silicon substrate.

CONSTITUTION: An N type layer 21 is formed on a P1+ type silicon substrate 20, and an N1+ type anode layer 22, an annular N2+ type layer 23 and a P2+ type layer 24 are formed on the layer 21. An anode electrode 26 is formed on the layer 22, and an annular recess groove 27 of the depth reaching the layer 20 from the surface at the outside of the layer 23 is formed. A connecting electrode 28 made of a conductive film is formed on the surface of the groove 27, and the N2+ layer 23 and P1+ layer 20 are electrically connected.