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Title:
CONTACT ALLOY FOR VACUUM BULB
Document Type and Number:
Japanese Patent JPH01217816
Kind Code:
A
Abstract:

PURPOSE: To reduce the generation of a material transfer phenomenon between contacts by making the ratio of the major axis to the minor axis of the formation of Cu crystalline particles of a Cu-Bi alloy 3.0 or larger.

CONSTITUTION: An isolation chamber 1 is partitioned airtight by an insulating container 2 formed cylindrical and metallic lids 4 and 5 provided through connections 3 and 3a at both ends of the container 2. In the isolation chamber 1, a fixed electrode 8 and a movable electrode 9 are arranged at the opposing ends of a pair of electrode rods 6 and 7, and the tips of the electrode 8 and 9 form contacts 14 and 14a. The contacts 14 and 14a are composed of a Cu-Bi alloy, and the whole area of the parts where the ratio of the major axis to the minor axis of the Cu crystalline particles is 3.0 or larger occupies 90% or more. To such an alloy, 0.0001-0.1% of boron is added, and the longitudinal direction of the Cu crystalline particles is arranged parallel to the contact surface. By such a constitution, the material transfer amount can be reduced, the contact resistance property can be improved, and the width of unevenness can be reduced.


Inventors:
OKUTOMI ISAO
SEKI KEISEI
HONMA MITSUTAKA
Application Number:
JP4076688A
Publication Date:
August 31, 1989
Filing Date:
February 25, 1988
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01H33/66; H01H1/02; (IPC1-7): H01H33/66
Attorney, Agent or Firm:
Shoko Inomata (1 person outside)



 
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