Title:
半導体装置のコンタクト形成方法及びその構造
Document Type and Number:
Japanese Patent JP4117087
Kind Code:
B2
Abstract:
A contact structure between two conductors in a semiconductor device and a method for fabricating the same which can increase alignment margins between the contact plug and overlying conductor are provided. The contact plug includes a lower conductor formed on a semiconductor substrate, an insulating layer formed on the lower conductor and on the semiconductor substrate, the insulating layer having a contact hole, a contact plug recess a predetermined depth from a top surface of the insulating layer in the contact hole, and a sidewall spacer formed on both lateral sidewalls of remainder of the contact hole. The contact plug structure is made by a process of forming a recessed contact plug in the contact hole formed in an insulating layer. Sidewall spacer is formed on both sidewalls of the remainder of the contact hole that has low aspect ratio as compared to that of the contact hole prior to the formation of the recessed contact plug. The resulting sidewall spacer can have good deposition profile and serves to reduce critical dimension of the contact hole.
Inventors:
Right of ownership
Application Number:
JP19578999A
Publication Date:
July 09, 2008
Filing Date:
July 09, 1999
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO.,LTD.
International Classes:
H01L21/768; H01L21/28
Domestic Patent References:
| JP11297819A | ||||
| JP10233445A | ||||
| JP8250591A | ||||
| JP8167589A | ||||
| JP6069359A | ||||
| JP4211148A | ||||
| JP4030426A |
Attorney, Agent or Firm:
Masaki Hattori
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