Title:
CONTACT TYPE IMAGE SENSOR
Document Type and Number:
Japanese Patent JP2685397
Kind Code:
B2
Abstract:
PURPOSE: To protect a photodetector with high moisture resistance without impairing element characteristics by forming a protective film of the photodetector made of amorphous silicon of polyimide resin.
CONSTITUTION: An ITO film is adhered about 5000&angst as a first electrode 22 on a light transmission insulating board. An amorphous silicon film is so adhered about 7000&angst by a glow discharging method as to cover the electrode 22, a photodetector 23 and an SnO2 film by a CVD are adhered about 4000&angst on the entire board 20, and then a second electrode 24, an interconnection 26, the electrode 33 and an interconnection 37 for externally connecting, and a first layer interconnection 30 of a matrix interconnection part are formed by reactive ion etching using CF gas containing Cl. Then, the entire board 30 is rotatably coated repeatedly three times with polyimide resin at 1000rpm for 30sec, and cured at 250°C for 30min to form a polyimide film 3, cured at 350°C for 2 hours to simultaneously form a protective film 25 and an insulating film 34 made of polyimide resin.
Inventors:
Kazuo Kobayashi
Yoshioka Yoshiko
Yoshioka Yoshiko
Application Number:
JP32225892A
Publication Date:
December 03, 1997
Filing Date:
November 09, 1992
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L27/146; H04N1/028; (IPC1-7): H01L27/146; H04N1/028
Domestic Patent References:
| JP54116890A | ||||
| JP5796575A | ||||
| JP58118143A |
Attorney, Agent or Firm:
Togawa Hideaki
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