Title:
CONTAINER OF SEMICONDUCTOR SUBSTRATE FOR LIQUIDDPHASE EPITAXIAL GROWTH
Document Type and Number:
Japanese Patent JPS5595321
Kind Code:
A
Abstract:
PURPOSE:To develop uniform epitaxial film on the large quantity of substrate by the device which has the circular V groove at the inner surface of cylindrical main part and has entrance opening for fured liquid at some place of the main part. CONSTITUTION:The V grooves 14 which are processed at the inner surface of semi- cylindrical part 10 of substrate container 11 cut into two parts at the opening 13 at the base. The V groove 14 fits for V groove 14' of cover 12. The main part and cover fit so that two substrate 15, 16 are held back to back in a single V groove. Next, the epitaxial film is formed by introducing the fused liquid from opening 13. With this construction during epitaxial growth, abnormal growth of alloy is not proceeded because of the boundary condition of substrate's circumference to a uniform line contact. And loading and unloading of the substrate is facile and moreover the large quantity of substrate can be treated.
Inventors:
FURUIKE SUSUMU
IWASA HITOO
IWASA HITOO
Application Number:
JP312979A
Publication Date:
July 19, 1980
Filing Date:
January 12, 1979
Export Citation:
Assignee:
MATSUSHITA ELECTRIC IND CO LTD
International Classes:
C30B19/06; H01L21/208; (IPC1-7): C30B19/06; H01L21/208