Title:
高温空気反応炉を有するガスタービンの制御
Document Type and Number:
Japanese Patent JP2006515047
Kind Code:
A
Abstract:
A method for producing, on an SiC substrate, SiC homoepitaxial layers of the same polytype as the substrate. The layers are grown on a surface of the SiC substrate, wherein the surface is inclined relative to the (0001) basal plane at an angle higher than 0.1 degree but less than 1 degree. An homoepitaxial growth is started by forming a boundary layer with a thickness up to 1 mum.
Inventors:
Hamlin Stellan
Application Number:
JP2006500752A
Publication Date:
May 18, 2006
Filing Date:
January 19, 2004
Export Citation:
Assignee:
Alstom Sweden AB
Northk Hydro ASA
Northk Hydro ASA
International Classes:
F02C6/00; B01D53/22; F02C7/141; F02C9/18
Attorney, Agent or Firm:
Fujita Akira