Title:
イオン注入機におけるドーズ量測定制御を行うための制御機構
Document Type and Number:
Japanese Patent JP4013081
Kind Code:
B2
Abstract:
A high throughput ion implantation system that rapidly and efficiently processes large quantities of flat panel displays. The ion implantation system has an ion source, an electrode assembly, a platform mounting a workpiece, and a ion beam measuring structure. The ion source in conjunction with the electrode assembly forms an ion beam in the shape of a ribbon beam. The ion beam is formed and directed such that a first portion of the ion beam treats the workpiece while a second portion of the ion beam is contemporaneously measured by the beam measuring structure. A controller obtains data from the beam measuring structure on the ion beam's parameters, and then generates control signals to the ion implantation system in response to the data.
Inventors:
Blake, Julian Gee.
Spherazzo, clown
Rose, Peter Etch.
Bray Love, Adam A.
Spherazzo, clown
Rose, Peter Etch.
Bray Love, Adam A.
Application Number:
JP52964597A
Publication Date:
November 28, 2007
Filing Date:
February 14, 1997
Export Citation:
Assignee:
Axcelis Technologies, Inc.
International Classes:
H01J37/04; H01J37/317; C23C14/48; H01J27/14; H01J37/08; H01J37/18; H01J37/30; H01J37/304; H01L21/00; H01L21/265; H01L21/677; H01L21/683
Domestic Patent References:
| JP3046745A | ||||
| JP3114127A | ||||
| JP3114128A | ||||
| JP4230944A | ||||
| JP7335173A |
Attorney, Agent or Firm:
Calyx