Title:
CONTROLLED ION IMPLANTATION INTO SILICON CARBIDE
Document Type and Number:
Japanese Patent JP2022031923
Kind Code:
A
Abstract:
To provide a method for forming a semiconductor structure.SOLUTION: A method for forming a semiconductor structure includes use of channeling implantation into a silicon carbide crystal. A partial method includes the steps of: preparing a silicon carbide layer having a crystal axis; heating the silicon carbide layer to a temperature of about 300°C or higher; implanting a dopant ion at an implantation angle less than about 2° between a direction of implantation into the heated silicon carbide layer and the crystal axis; and annealing the silicon carbide layer on the basis of a time-temperature product less than about 30,000°C time so as to activate the implanted ion.SELECTED DRAWING: Figure 1
Inventors:
ALEXANDER V SUVOROV
VIPINDAS PALA
VIPINDAS PALA
Application Number:
JP2021202470A
Publication Date:
February 22, 2022
Filing Date:
December 14, 2021
Export Citation:
Assignee:
CREE INC
International Classes:
H01L21/265; H01L21/329; H01L21/336; H01L29/06; H01L29/12; H01L29/739; H01L29/78; H01L29/861; H01L29/872
Domestic Patent References:
| JP2013042050A | 2013-02-28 |
Attorney, Agent or Firm:
Shinichiro Tanaka
Hiroyuki Suda
Fumiaki Otsuka
Takayoshi Nishijima
Hiroshi Uesugi
Naoki Kondo
Takeo Nasu
Hiroyuki Suda
Fumiaki Otsuka
Takayoshi Nishijima
Hiroshi Uesugi
Naoki Kondo
Takeo Nasu
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