PURPOSE: To cool a semiconductor device in a superior cooling efficiency by adopting a semiconductor device cooling method wherein a semi-solidified metal consisting of a mixed phase of liquid and solid is used as a junction layer between a cooling structure wherein a coolant is circulated and the semiconductor device.
CONSTITUTION: The bonding of a semiconductor device 10 and a metal block 11 is executed with a semi-solidified metal 18 which presents a sher bet state at high viscosity at the operating temperature of a semiconductor. Thereby, the bonded state of both becomes complete and moreover there is no possibility of the short-circuits between circuits due to outflow and leakage that are caused by the reduction in viscosity and a reduction in heat resistance can be realized. As the semi-solidified metal which bonds the metal block 11 and the semiconductor device 10, an InGa solid solution of 80 wt. % is used. The solid solution of this composition is a two-phase mixed material within an extent of 15.7W88°C, its viscosity is high, there is no possibility of outflow and leakage, a complete thermal bonding is executed and the same low thermal resistivity as the case where the block and the device are welded with solder can be obtained.
WATANABE ISAO
KATSUYAMA YUKIHISA
KAWAMURA ISAO
YAMAMOTO HARUHIKO
NAGAI TAKESHI
| JPS58196041A | 1983-11-15 | |||
| JPS58199546A | 1983-11-19 |