Title:
半導体リソグラフィー用共重合体とその製造方法、および組成物
Document Type and Number:
Japanese Patent JP5452031
Kind Code:
B2
Abstract:
In order to improve a resist pattern shape in a semiconductor lithography process, which is a factor largely affecting on a processing precision, an integration degree and yield, a copolymer for semiconductor lithography where a composition of a hydroxyl group-containing repeating unit in a low molecular weight region is controlled, and a method of producing the same are provided. According to the invention, in a copolymer for semiconductor lithography, which is obtained by copolymerizing a monomer having a hydroxyl group and a monomer having no hydroxyl group, when a copolymer of which composition of a hydroxyl group-containing repeating unit is controlled is used, the object can be achieved.
Inventors:
Takanori Yamagishi
Takenori Okada
Yamaguchi Kenshi
Kiyomi Miki
Takenori Okada
Yamaguchi Kenshi
Kiyomi Miki
Application Number:
JP2009028006A
Publication Date:
March 26, 2014
Filing Date:
February 10, 2009
Export Citation:
Assignee:
Maruzen Petrochemical Co., Ltd.
International Classes:
C08F212/14; C08F8/00; C08F212/04; C08F220/10; C08F220/26; C08F220/28; G03F7/004; G03F7/039; G03F7/11; H01L21/027
Domestic Patent References:
| JP2001201856A | ||||
| JP57120931A | ||||
| JP2003231721A | ||||
| JP2003322971A | ||||
| JP2002365804A | ||||
| JP4284358B2 | ||||
| JP2005275072A | ||||
| JP2005309376A |
Attorney, Agent or Firm:
Alga Patent Office, a patent business corporation
Miyuki Ariga
Toshio Takano
Toshio Nakajima
Masaki Murata
Hiroto Yamamoto
Miyuki Ariga
Toshio Takano
Toshio Nakajima
Masaki Murata
Hiroto Yamamoto