Title:
銅チタン合金製スパッタリングターゲット、同スパッタリングターゲットを用いて形成した半導体配線並びに同半導体配線を備えた半導体素子及びデバイス
Document Type and Number:
Japanese Patent JP5722427
Kind Code:
B2
Abstract:
A copper-titanium alloy sputtering target comprising 3 at% or more and less than 15 at% of Ti and a remainder made up of Cu and unavoidable impurities, wherein a variation (standard deviation) in hardness is within 5.0 and a variation (standard deviation) in electric resistance is within 1.0 in an in-plane direction of the target. Provided are: a sputtering target for forming a copper-titanium alloy wiring line for semiconductors capable of causing the copper alloy wiring line for semiconductors to be equipped with a self-diffusion suppressive function, effectively preventing contamination around the wiring line caused by diffusion of active Cu, improving electromigration (EM) resistance, corrosion resistance and the like, enabling the arbitrary formation of a barrier layer in a simple manner, and uniformizing film properties; a copper-titanium alloy wiring line for semiconductors; and a semiconductor element and a device each equipped with the semiconductor wiring line.
Inventors:
Otsuki Tomio
Atsushi Fukushima
Atsushi Fukushima
Application Number:
JP2013502236A
Publication Date:
May 20, 2015
Filing Date:
February 15, 2012
Export Citation:
Assignee:
jx Nippon Mining & Metals Co., Ltd.
International Classes:
C23C14/34; C22C9/00; C22F1/00; C22F1/08; H01L21/28; H01L21/285; H01L21/3205; H01L21/768; H01L23/532
Domestic Patent References:
| JP2005533187A | 2005-11-04 |
Foreign References:
| WO2003064722A1 | 2003-08-07 |
Attorney, Agent or Firm:
Isamu Ogoshi