Title:
COPPER WIRING IN SEMICONDUCTOR DEVICES
Document Type and Number:
Japanese Patent JP3890722
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a structure for copper wiring in semiconductor devices, with which failures caused by peeling off of the wired copper, and reliability degradation of the wiring and the like, are prevented.
SOLUTION: As an undercoat for copper wiring 23, a titanium nitride film 21 is formed, wherein the film is a nitrogen interstitial solid solution, which features excellent adhesion to copper, effective barrier against copper, and low reactivity with copper. As an embodiment, a titanium film 20 and a titanium nitride film 21 of a nitrogen interstitial solid solution are stacked in this order on inside wall of a groove 18 formed in a PE-SiO2 film 17, and copper wiring 23 is formed thereon. Because the titanium nitride film of a nitrogen interstitial solid solution is formed as an undercoat for the copper wiring 23, it is possible to minimize resistance increase of the copper wiring 23, and to obtain better adhesion to copper as compared with existing titanium nitride film that contains crystalline titanium nitride while preventing diffusion of copper into interlayer insulating film.
Inventors:
Taguchi Mitsuru
Keiichi Maeda
Keiichi Maeda
Application Number:
JP3253998A
Publication Date:
March 07, 2007
Filing Date:
February 16, 1998
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/28; H01L21/3205; H01L23/52; (IPC1-7): H01L21/3205; H01L21/28
Domestic Patent References:
| JP6333927A | ||||
| JP8102463A | ||||
| JP5152245A | ||||
| JP3156928A | ||||
| JP8097209A |
Attorney, Agent or Firm:
Funabashi Kuninori
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