銅配線、半導体装置および銅配線形成方法

Title:

銅配線、半導体装置および銅配線形成方法

Document Type and Number:

Japanese Patent JP4415100

Kind Code:

B1

Abstract:

A copper interconnection structure includes an insulating layer, an interconnection body including copper in an opening provided on the insulating layer, and a diffusion barrier layer formed between the insulating layer and the interconnection body. The diffusion barrier layer includes an oxide layer including manganese having a compositional ratio of oxygen to manganese (y/x) less than 2.

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Inventors:

Junichi Koike
Akihiro Shibatomi

Application Number:

JP2008324062A

Publication Date:

February 17, 2010

Filing Date:

December 19, 2008

Export Citation:

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Assignee:

Tohoku University
Advanced Wiring Materials Research Institute, LLC

International Classes:

H01L21/3205; C23C14/14; H01L21/28; H01L23/52

Domestic Patent References:

JP2008187072A
JP2008147467A
JP2007059660A
JP2007048974A

Attorney, Agent or Firm:

Kenzo Fukuda
Shinichi Fukuda
Takemichi Fukuda
Kyosuke Kato

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