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Title:
CORRECTING METHOD FOR PHASE SHIFT PHOTOMASK AND PHASE SHIFT PHOTOMASK SUITABLE FOR CORRECTION
Document Type and Number:
Japanese Patent JP3034096
Kind Code:
B2
Abstract:

PURPOSE: To provide a correcting method for a photomask having a phase shift layer possible to improve etching speed and to precisely control stoppage point.
CONSTITUTION: The correcting method for the phase shift photomask consists of a substrate 30 made of a material containing mainly silicon oxide, a light shielding film pattern 31 and a phase shift pattern 32 made of a material containing mainly silicon oxide. While a phase shifter pattern defective part 33 in a position corresponding to the transparent part of the light shielding film pattern 31 is irradiated with a focusing beam 34 of gallium ion or silicon ion, an inert element fluoride and a fluorine base fluorocarbon gas 35 such as xenon fluoride, krypton fluoride are supplied to etch a residual phase shift layer of the defective part and a prescribed depth of the substrate and the phase shift quantity of whole etching part is controlled to be about integral multiple of 360°C.


Inventors:
Miyashita, Hiroyuki
Application Number:
JP1991000295609
Publication Date:
April 17, 2000
Filing Date:
November 12, 1991
Export Citation:
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Assignee:
DAINIPPON PRINTING CO LTD
International Classes:
G03F1/30; G03F1/72; G03F1/74; H01L21/027; (IPC1-7): G03F1/08; H01L21/027
Attorney, Agent or Firm:
韮澤 弘 (外7名)