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Title:
CROSS SECTION OBSERVATION METHOD AND CROSS SECTION OBSERVATION DEVICE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2007142453
Kind Code:
A
Abstract:

To continue manufacturing without affecting the manufacture and manufacturing line by a sample after inspecting a cross section of the sample in the middle stage of steps of manufacturing a semiconductor and again returning the sample to the manufacturing line.

A method for manufacturing a semiconductor wafer consists of: a step of locally processing the semiconductor wafer in order to expose the cross section thereof after arbitrary step in the middle of the steps of manufacturing the semiconductor wafer; a step of performing inspection of the cross section; a step of performing failure analysis of the semiconductor wafer based on cross section inspection information, manufacturing career information from a first step to the arbitrary step, inspection information about contamination, pattern, and the like from the first step to the arbitrary step, and design information, and modifying manufacture condition from a first step to the arbitrary step based on the failure analysis results when the semiconductor wafer is judged by the inspection that it is fault; and a step of embedding a part which is removed in order to expose the cross section of the semiconductor wafer. The method for manufacturing the semiconductor wafer returns the semiconductor wafer to the next step of the arbitrary step, and continues manufacturing.


Inventors:
HAMAMURA YUICHI
SHIMASE AKIRA
MIZUKOSHI KATSURO
HONGO MIKIO
AZUMA JUNZO
MIZUMURA MICHINOBU
YOKOYAMA NATSUKI
ISHITANI TORU
Application Number:
JP2007015261A
Publication Date:
June 07, 2007
Filing Date:
January 25, 2007
Export Citation:
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Assignee:
RENESAS TECH CORP
International Classes:
H01L21/02; H01L21/66
Domestic Patent References:
JPH03272554A1991-12-04
JPH0433326A1992-02-04
JPH06252233A1994-09-09
JPH08203898A1996-08-09
JPS62229956A1987-10-08
JPH07320670A1995-12-08
Attorney, Agent or Firm:
Yamato Tsutsui