PURPOSE: To obtain the positive type radiation-crosslinkable photoresist having excellent properties of sensitivity, resolution and dry-etching resistance, and having a less tendency for generating troubles about the production and the handling of the titled resist.
CONSTITUTION: The positive type resist is composed of the copolymer contg. the structural units and the composition shown by formulas IWIII wherein R1WR3 are each a same or a different group and selected among a hydrogen atom, a halogen atom, a lower alkyl, a lower haloalkyl, a lower alkoxyl, a lower acyl, a hydroxyl, a cyano, an amino and a lower amino groups, R4 is a lower alkyl, a lower haloalkyl group, a halogen atom or a cyano group, R5 is a lower alkyl, a lower haloalkyl, an aryl or an aralkyl group, R6 is a hydrogen atom, a lower alkyl group, a halogen atom or a cyano group, R7 is a hydrogen atom or a lower alkyl group, R8 is an lower alkyl, a lower haloalkyl, an aryl or an aralkyl group.
UENO NOBUO
SASAKI SHIGERU
OSADA SHIRO
