Title:
CRUCIBLE FOR GROWING CRYSTAL
Document Type and Number:
Japanese Patent JPS5957985
Kind Code:
A
Abstract:
PURPOSE:To reduce the effect of heat convections and to grow a crystal having a uniform composition by horizontally installing a convection preventing plate having a circular opening along the inner wall of a crucible. CONSTITUTION:A plurality of protruded supporting parts 17, 17' are formed at the central part of the inner wall of a crucible 11 in the longitudinal direction, and a convection preventing plate 18 is held almost horizontally between the parts 17, 17' along the inner wall of the crucible 11 in a detachable state. The plate 18 has a plurality of peripheral recesses 19 which are smaller than the parts 17' and coincide with the parts 17. When the plate 18 is placed on the parts 17' and moved to the right or left, it is fixed between the parts 17, 17'. The plate 18 is a doughnut-shaped one having a hole 20 through which a grown single crystal passes at the central part. The hole 20 is required to have a diameter enough to measure a meniscus line even when a melt 13 reaches the lowest level in accordance with the progress of crystal growth.
Inventors:
FUKUDA TETSUO
HIRAI IESADA
AMANO KAZUNARI
HIRAI IESADA
AMANO KAZUNARI
Application Number:
JP16893482A
Publication Date:
April 03, 1984
Filing Date:
September 28, 1982
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
C30B15/10; C30B15/22; C30B15/30; H01L21/208; (IPC1-7): C30B15/10; H01L21/02; H01L21/208
Attorney, Agent or Firm:
Koshiro Matsuoka
Previous Patent: A manufacturing method of a semiconductor light emitting element
Next Patent: METHOD FOR PULLING UP SINGLE CRYSTAL
Next Patent: METHOD FOR PULLING UP SINGLE CRYSTAL