Title:
シリコン結晶化用坩堝
Document Type and Number:
Japanese Patent JP5059602
Kind Code:
B2
Abstract:
The invention relates to a crucible for the crystallization of silicon and to the preparation and application of release coatings for crucibles used in the handling of molten materials that are solidified in the crucible and then removed as ingots, and more particularly to release coatings for crucibles used in the solidification of polycrystalline silicon. The objective of the inventor was to provide a crucible which does not require the preparation of a very thick coating at the end user facilities, which is faster and cheaper to produce and which presents a stronger coating with an improved adherence to the walls. It has now been found that these problems can be solved with a crucible for the crystallization of silicon comprising a) a base body comprising a bottom surface and side walls defining an inner volume; b) an intermediate layer comprising 50 to 100 wt. % of silica at the surface of the side walls facing the inner volume; and c) a surface layer comprising 50 to 100 wt. % of silicon nitride, up to 50 wt. % of silicon dioxide and up to 20 wt % of silicon on the top of the intermediate layer.
Inventors:
Rankol, Gilbert
Application Number:
JP2007509835A
Publication Date:
October 24, 2012
Filing Date:
April 26, 2005
Export Citation:
Assignee:
Vesuvius Crucible Company
International Classes:
C30B29/06; C03B20/00; C30B15/10
Domestic Patent References:
| JP57188498A | ||||
| JP10316489A | ||||
| JP2172887A | ||||
| JP2172886A | ||||
| JP5097571A | ||||
| JP54141389A | ||||
| JP54157779A | ||||
| JP56032397A |
Attorney, Agent or Firm:
Atsushi Aoki
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Hiroshi Kamematsu
Takashi Ishida
Tetsuji Koga
Nagasaka Tomoyasu
Hiroshi Kamematsu