パターン形成された突起構造層を有するシリコンインゴット成長用のるつぼ

Japanese Patent JP7145763

B2

A crucible for growing silicon ingots may include a vessel having a bottom wall and side walls surrounding an inner portion of the vessel. A coating layer is applied to inner surfaces of the bottom wall and the side walls, the coating layer including a temperature-resistant material compatible with ingot growth from molten silicon such as silicon nitride. A patterned protrusion layer is applied at the inner surface of the bottom wall, which includes a matrix consisting of a temperature-resistant material compatible with ingot growth from molten silicon such as silicon nitride. Furthermore, the patterned protrusion layer includes particles of a nucleation enhancing material such as silica, the particles locally protruding from the matrix. The protruding particles may generate a pattern of multiple nucleation points during crystal growth of the ingot. Due to such multiple nucleation points, a dislocation density defect propagation towards a top may be reduced during crystal growth such that, e.g., solar cells produced with wafers sliced from the resulting ingot may have an improved conversion efficiency.

Kumaran, Abu Udayar Senthir
woo, yuhao mike
Tan, Chi
Le Flao, Benoît Jean-Jacques
Eun, Hook Carr
Song, adolphs

JP2018560470A

October 03, 2022

May 10, 2017

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REC Solar Private Limited

C30B29/06; C01B33/02; C04B41/87; C30B11/00

JP2013112603A
JP11244988A

CN105063748A
US20120167817

Hideaki Ito
Fumio Mihashi
Hirohisa Hachiya
Hiroshi Uenishi

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