Title:
CRUCIBLE, AND SINGLE CRYSTAL GROWING UNIT AND GROWING METHOD
Document Type and Number:
Japanese Patent JP2017222537
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide: a single crystal growing apparatus and a single crystal growing method capable of using a crucible made of graphite, extremely simple in assembly and arrangement, efficient in thermal efficiency, capable of growing of a single crystal of a large diameter of 8 inches or more and having little strain; and a long-life crucible for use in a single crystal growing apparatus and a single crystal growing method.SOLUTION: In a single crystal growing apparatus for growing a single crystal 200 by pulling up a seed crystal 210, after the seed crystal 210 was made to contact a material molten liquid 300 in a crucible, said crucible includes: a material holding crucible 18, in which the inner face of a body composed of W and Mo is covered with a layer made of Ir and Pt; and a heating crucible 19 arranged at intervals or without intervals on the outer side of said material holding crucible 18.SELECTED DRAWING: Figure 1
Inventors:
FUKUDA TSUGUO
Application Number:
JP2016118886A
Publication Date:
December 21, 2017
Filing Date:
June 15, 2016
Export Citation:
Assignee:
FUKUDA CRYSTAL LABORATORY
International Classes:
C30B15/10; C30B29/16; F27B14/10; F27D11/06
Domestic Patent References:
| JP2016028831A | 2016-03-03 | |||
| JPS57156400A | 1982-09-27 | |||
| JP2015048296A | 2015-03-16 | |||
| JP2000344593A | 2000-12-12 |
Foreign References:
| WO2016010040A1 | 2016-01-21 |
Attorney, Agent or Firm:
Hisao Fukumori
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